參數(shù)資料
型號(hào): FMS2013
英文描述: SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
中文描述: 單刀雙擲砷化鎵吸收開(kāi)關(guān),高隔離的DC - 4 GHz頻率范圍
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 197K
代理商: FMS2013
Preliminary Data Sheet
2.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Features:
Available as RF Known Good Die
Excellent low control voltage performance
Excellent harmonic performance
Very high isolation >49dB typ. up to 4GHz
Very low Tx Insertion loss <1.0 dB at 4GHz
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5
μ
m switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications:
(T
OP
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Tx Insertion Loss
4GHz
1.0
dB
Rx Insertion Loss
4GHz
1.0
dB
Return Loss
4GHz
15
dB
VSWR On State
4GHz
1:1.3
VSWR Off State
4GHz
1:1.4
Isolation at 4 GHz
4GHz
49
dB
2nd Harmonic Level
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
-72
-68
dBc
dBc
Switching speed
Pin = 21dBm, 10% to 90% RF
30
ns
Note:
External DC blocking capacitors are required on all RF ports (typ: 47pF).
Functional Schematic
RFIN
V2
V1
RF02
RF01
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