參數(shù)資料
型號(hào): FMM75-01F
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
中文描述: 75 A, 100 V, 0.021 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOPLUS, I4PAC-5
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 46K
代理商: FMM75-01F
1 - 2
2004 IXYS All rights reserved
4
FMM 75-01F
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
I
D25
V
DSS
R
DSon typ.
= 18 m
= 75 A
= 100 V
HiPerFET
TM
Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PAC
TM
Features
HiPerFET
TM
technology
- low R
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
drives and power supplies
battery or fuel cell powered
automotive, industrial vehicle etc.
secondary side of mains power
supplies
MOSFET T1/T2
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
100
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
75
50
A
A
I
F25
I
F90
(body diode) T
C
= 25°C
(body diode) T
C
= 90°C
100
60
A
A
dv/dt
V
DS
< V
; I
F
300A;
di
F
/dt
100A/μs; R
G
= 2
T
VJ
= 150°C
5
V/ns
E
AR
T
C
= 25°C
30
mJ
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
18
25 m
V
GSth
V
DS
= 20 V;
I
D
= 4 mA
2
4
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.3 mA
0.25
mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
200
nA
Q
g
Q
gs
Q
gd
180
35
85
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
20
60
80
60
ns
ns
ns
ns
V
F
(body diode) I
F
= 75 A;
V
GS
= 0 V
1.2
1.5
V
t
rr
(body diode) I
F
= 37.5A;
-di/dt = 100A/μs; V
DS
= 25V
300
ns
R
thJC
R
thJH
0.5 K/W
K/W
with heat transfer paste
0.93
V
GS
= 10 V; V
DS
= 0.5 V
DSS
; I
D
= I
D90
V
= 10 V; V
= 0.5 V
DSS
I
D
= I
D90
; R
G
= 2
T1
T2
3
5
4
1
2
1
5
相關(guān)PDF資料
PDF描述
FMMD7000 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR (SERIES)
FMMT5087 SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR
FMMT5209 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
FMMT5210 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
FMMTA70 SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMM7G20US60I 功能描述:IGBT 模塊 600V 20A Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMM7G20US60N 功能描述:IGBT 模塊 600V 20A Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMM7G20US60SI 功能描述:IGBT 模塊 Compact Module Complex RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMM7G20US60SN 功能描述:IGBT 模塊 Compact Module Complex RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMM7G30US60I 功能描述:IGBT 模塊 600V 30A Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: