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參數(shù)資料
| 型號(hào)： | FMM5807X |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 21-27GHz Power Amplifier MMIC |
| 中文描述： | 21，頻率在27GHz單片功率放大器 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 860K |
| 代理商： | FMM5807X |
FMM5807X
21-27GHz Power Amplifier MMIC
Item
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
10
-3.0
-65 to +175
V
V
Input Power
25
dBm
°
C
Operating Backside Temperature
-40 to +85
°
C
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged.
1
Edition 1.2
January 2001
Item
Symbol
Output Return Loss
RLout
Conditions
Unit
Limits
Typ.
21 - 27
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25
°
C)
Power Gain at 1 dB G.C.P.
10
14
19
-
-8
-
dB
Input Return Loss
RLin
-
-
-12
dB
dB
Frequency Range
f
GHz
Output Power at 1 dB G.C.P.
28**
30**
-
27*
29*
-
dBm
P
1dB
G
1dB
G.C.P.: Gain Compression Point
Power-Added Efficiency
-
20
-
%
η
add
Drain Current
-
700
950
mA
Iddrf
VDD = 6V
f = 21 ~ 27 GHz
*: at f = 21-24 GHz
**: at f = 24-27 GHz
IDD
=
650mA (Typ.)
ZS = ZL = 50
Note:
RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
DESCRIPTION
The FMM5807X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 21-27GHz
frequency range. This amplifier has an input and output
designed for use in 50
systems. This device is well suited
for millimeter wave radio applications.
FEATURES
High Output Power: P1dB= 30dBm (Typ.)
High Gain: G1dB= 14dB (Typ.)
High PAE:
η
add= 20% (Typ.)
Wide Frequency Band: 21-27 GHz
Impedance Matched Zin/Zout = 50
0.25μm PHEMT Technology
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