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參數(shù)資料
| 型號： | FMM3117VN |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 12.5Gbps Dual-drive LN Modulator Driver IC |
| 中文描述： | 12.5Gbps的雙驅(qū)動器號法律公告調(diào)制器驅(qū)動IC |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 513K |
| 代理商： | FMM3117VN |
FMM3117VN Datasheet Rev. B2 April, 2004
FMM3117VN
12.5Gbps Dual-drive LN Modulator Driver IC
E udyna Devices Inc.
1
1. Features
1)
High Speed Operation up to 12.5Gbps
2)
On-chip 50 ohm Termination for High Speed Data Input
3)
Rapid Rise/Fall Time : 25ps (Typ., 20-80%)
4)
Adjustable Output Voltage Swing :2.0Vpp to 2.85Vpp (50ohm Load)
5)
Adjustable Output Offset Level
6)
Single Power Supply Voltage : -5.2V
7)
Duty Ratio Adjustment
8)
6mm x 6mm 32-pin Hermetically Sealed Ceramic Package
2. Maximum Ratings
The semiconductor devices can be permanently damaged by application of stress (voltage,
current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. The
normal logic operation is not assured even within the ratings.
Table 2-1. Maximum Ratings
Parameter
Symbol
Value
Unit
Supply Voltage
Input Voltage
Power Supply Current
Vss
Vin
-6.50 to 0.0
-2.0 to 0.5
500
Vss-0.5 to Vss+2.2
-8.0 to 0.5
50
Vss-0.5 to Vss+2.2
-3.1 to 0.5
-55 to 125
V
V
Iss
mA
V
V
mA
V
V
degC
Output Swing Control Voltage
Vip
Output Offset Control Voltage
V
IB1
,V
IB2
IB1,IB2
Output Offset Control Current
Duty Control Voltage
Vdut
Output Voltage
Storage Temperature
Vout
Tstg
This device contains Gallium Arsenide(GaAs).
For safety, please observe the following:
(1) Do not put devices in your mouth. Gallium Arsenide is
dangerous if ingested.
(2) Do not burn, crush, or process chemically. It is dangerous to
inhale or ingest the gas, powder, or liquid which results from
burning, crushing or chemical processing of the devices.
(3) Discard devices separately from industrial and domestic wastes
in accordance with the method specified by law.
!
GaAs
CAUTION
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