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參數(shù)資料
| 型號(hào)： | FMM5017VF |
| 廠商： | FUJITSU LTD |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC |
| 中文描述： | 14000 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | HERMETIC SEALED, METAL-CERAMIC, CASE STYLE VF, 6 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | FMM5017VF |
1
Edition 1.1
August 1999
FMM5017VF
GaAs MMIC
DESCRIPTION
The FMM5017VF is a MMIC amplifier designed for VSAT applications
as a driver or output stage in the 14.0 to 14.5 GHz band. This device
is well suited for designs that require less than 1 Watt and lower cost.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: 29dBm (typ.)
High Linear Gain: 20dB (typ.)
Low In/Out VSWR
Integrated Output Power Monitor
Impedance Matched Zin/Zout = 50
Small Hermetic Metal-Ceramic Package (VF)
Item
Frequency Range
Output Power at 1dB G.C.P.
Linear Gain
Gain Flatness
Input VSWR
Output VSWR
Power Monitor
DC Input Current
DC Input Current
Symbol
f
14.0 ~ 14.5
Pout = 28.0dBm
28.0
29.0
-
18.0
20.0
-
-
1.0
1.5
-
2:1
2.3:1
-
2.3:1
3:1
-
2.5
-
-
700
1000
VDD = 10V
VGG = -5V
f = 14.0 to 14.5 GHz
VDD = 10V
VGG = -5V
GHz
dBm
dB
-
-
dB
mA
V
-
15
20
mA
P1dB
G
G
VSWRi
VSWRo
IDD
Vmon
IGG
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
CASE STYLE: VF
Item
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
Tstg
12
-7
17
-55 to +125
-40 to +85
V
V
dBm
°
C
°
C
Top
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
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