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參數(shù)資料
| 型號(hào)： | FMA219 |
| 英文描述： | X-BAND LNA MMIC |
| 中文描述： | X波段單片低噪聲放大器 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | FMA219 |
PRELIMINARY
FMA219
X-BAND
LNA
MMIC
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
11/22/04
Email:
sales@filcsi.com
PERFORMANCE
7.0 – 11.0 GHz Operating Bandwidth
1.5 dB Noise Figure
21 dB Small-Signal Gain
12 dBm Output Power
+3V Single Bias Supply
DC De-coupled Input and Output Ports
DESCRIPTION AND APPLICATIONS
The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use
over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip
component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding
of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is
required.
Typical applications include low-noise front end amplifiers, and general gain block utilizations in X-
band. The amplifier is unconditionally stable over all load states (-45 to +85
°
C), and conditionally
stable if the input port is open-circuited.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
BW
S
21
I
OP
S
21
NF
IMD
Test Conditions
V
DD
= +3 V I
DD
= I
OP
V
DD
= +3 V I
DD
= I
OP
No RF input
V
DD
= +3 V I
DD
= I
OP
V
DD
= +3 V, I
DD
= I
OP
V
DD
= +3 V, I
DD
= I
OP
P
OUT
= +1.5 dBm SCL
V
DD
= +3 V
V
DD
= +3 V I
DD
= I
OP
V
DD
= +3 V I
DD
= I
OP
V
DD
= +3 V I
DD
= I
OP
Min
7
19
50
Typ
21
65
±
0.5
1.5
-47
12.5
-7
-16
-40
Max
11
23
85
±
0.8
1.7
Units
GHz
dB
mA
Operating Frequency Bandwidth
Small Signal Gain
Operating Current
Small Signal Gain Flatness
Noise Figure
dB
dBc
dBm
dB
dB
dB
3
rd
-Order Intermodulation Distortion
Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
P
1dB
S
11
S
22
S
12
11.5
-3
-10
-30
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