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參數(shù)資料
| 型號(hào)： | FM5821-AL |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | CONN HEADER .100 32POS TIN PCB |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | FM5821-AL |
FM5820-AL THRU FM5822-AL
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gram
(V)
(V)
(V)
(V)
(
o
C)
FM5820-AL
SK32
20
14
20
0.475
FM5821-AL
SK33
30
21
30
0.500
FM5822-AL
SK34
40
28
40
0.525
SYMBOLS
MARKING
CODE
-55 to +125
Storage
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
80
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
80
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
250
pF
Operating temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.024(0.60)
Dimensions in inches and (millimeters)
SMA-L
0.034(0.85)
0.024(0.60)
0.034(0.85)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM5820-A | CONN HEADER .05 45X4PS GOLD SMD |
| FM6100-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM620-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM630-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM640-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM5821-ALN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5821-AN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5821B | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes |
| FM5821L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Ampere |
| FM5821-W | 功能描述:肖特基二極管與整流器 3A 30V 0.5vF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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