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參數(shù)資料
| 型號： | FM5820-A |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | CONN HEADER .05 45X4PS GOLD SMD |
| 中文描述： | 硅外延龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 67K |
| 代理商： | FM5820-A |
FM5820-A THRU FM5822-A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gram
(V)
(V)
(V)
(V)
(
o
C)
FM5820
SK32
20
14
20
0.475
FM5821
SK33
30
21
30
0.500
FM5822
SK34
40
28
40
0.525
SYMBOLS
MARKING
CODE
-55 to +125
Storage
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
80
A
V
R
= V
RRM
T
A
= 25
o
C
2.0
mA
V
R
= V
RRM
T
A
= 125
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
80
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
250
pF
Operating temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA
Formosa MS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM6100-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM620-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM630-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM640-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM650-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM5820-A80U | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5820-AL | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5820-ALN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5820-AN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5820B | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes |
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