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參數(shù)資料
| 型號： | FLM6472-6F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 250K |
| 代理商： | FLM6472-6F |
2
FLM6472-6F
C-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°
C)
40
30
20
10
T
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 7.2 GHz
f2 = 7.21 GHz
2-tone test
18
16
14
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
20
22
24
21
23
25
27
29
31
33
35
19
-55
-50
-45
-40
-35
-30
-25
-20
O
IM3
Pout
I
OUTPUT POWER vs. FREQUENCY
Pin=30dBm
28dBm
26dBm
24dBm
6.6
6.4
6.8
7.0
7.2
Frequency (GHz)
36
37
38
39
40
34
35
O
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 6.8 GHz
20
18
22
24
26
28
30
Input Power (dBm)
38
40
36
34
32
30
30
45
15
0
O
η
add
Pout
η
a
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLM7179-12F | C-Band Internally Matched FET |
| FLM7179-6F | C-Band Internally Matched FET |
| FLM7185-12F | C-Band Internally Matched FET |
| FLM7185-6F | C-Band Internally Matched FET |
| FLM7785-45F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM6472-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 9.5dB, 6.4 7.2GHz, 2200mA, Bulk |
| FLM7 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM7179-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM7179-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 8dB, 7.1 7.9GHz, 4875mA, Bulk |
| FLM7179-4F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 9dB, 7.1 7.9GHz, 1100mA, Bulk |
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