- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377114 > FLM1011-15F (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) X,Ku-Band Internally Matched FET PDF資料下載
參數(shù)資料
| 型號： | FLM1011-15F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X,Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 197K |
| 代理商： | FLM1011-15F |
X,Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
η
add=31%(Typ.)
Broad Band: 10.7~11.7GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
Edition 1.2
September 2004
1
FLM1011-15F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
DESCRIPTION
The FLM1011-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ESD
Class
III
2000V
~
CASE STYLE: IB
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
Power Gain at 1dB G.C.P.
Limit
Typ.
7.2 10.8
Item
Symbol
Test Conditions
Unit
Drain Current
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
A
mS
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-
4500 -
-0.5 -1.5 -3.0
-5.0 -
-
41.0 42.0 -
6.0 7.0 -
-
4.0 5.0
V
DS
=10V
f=10.7 - 11.7 GHz
I
DS
=0.5Idss (typ)
Zs=Z
L
=50
Power-added Efficiency
η
add
%
dB
-
31 -
-
-
1.2
V
DS
=5V, V
GS
=0V
Transconductance
V
DS
=5V, I
DS
=4.55A
V
DS
=5V, I
DS
=300mA
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-300uA
G
1dB
Thermal Resistance
R
th
T
ch
Channel to Case
-
2.3 2.6
o
C/W
Channel Temperature Rise
10V x Idsr x Rth
-
-
100
o
C
3rd Order Intermodulation
Distortion
IM
3
-42 -45 -
dBc
f=11.7GHz,
f=10MHz, 2-Tone Test
Pout=30.0dBm S.C.L.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
T
ch
15
-5
57.7
-65 to +175
V
V
W
Channel Temperature
175
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
°
C)
Item
Symbol
Condition
Unit
DC Input Voltage
V
DS
≤
10
≤
16.7
≥
-3.62
V
mA
Limit
R
G
=50
R
G
=50
mA
Forward Gate Current
I
GF
Reverse Gate Current
I
GR
相關PDF資料 |
PDF描述 |
|---|---|
| FLM1011-20F | X,Ku-Band Internally Matched FET |
| FLM1011-3F | X, Ku-Band Internally Matched FET |
| FLM1011-4F | X, Ku-Band Internally Matched FET |
| FLM1314-12F | X, Ku-Band Internally Matched FET |
| FLM1414-3F | Internally Matched Power GaAs FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1011-20F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X,Ku-Band Internally Matched FET |
| FLM1011-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1011-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1011-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7.5dB, 10.7 11.7GHz, 1650mA, Bulk |
| FLM1011-8F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
發(fā)布緊急采購，3分鐘左右您將得到回復。