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參數(shù)資料
| 型號： | FLM1011-20F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X,Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 276K |
| 代理商： | FLM1011-20F |
Edition 1.2
September 2004
1
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)
ESD
Class
III
2000V
~
X,Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB=43.0dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
η
add=27%(Typ.)
Broad Band: 10.7
～
11.7GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
DESCRIPTION
The FLM1011-20F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
°
C)
Item
Symbol
FLM1011-20F
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
≤
10
≤
64
≥
-11.2
V
mA
Limit
R
G
=25
Reverse Gate Current
I
GR
R
G
=25
mA
CASE STYLE: IK
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
93.7
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Power Gain at 1dB G.C.P.
Limit
Typ.
10.8 16.2
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
A
S
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-
10 -
-0.5 -1.5 -3.0
-5.0 -
-
42 43 -
6.0 7.0 -
-
6.0 7.2
V
DS
=10V
f=10.7 - 11.7 GHz
I
DS
=0.60I
DSS
(typ)
Zs=Z
L
=50
Power-added Efficiency
η
add
%
-
27 -
-
-
1.2
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=6480mA
V
DS
=5V, I
DS
=600mA
I
GS
=-600
μ
A
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
G
1dB
dB
3rd Order Intermodulation
Distortion
IM
3
f= 11.7 GHz
Δ
f=10MHz, 2-tone Test
Pout=31.0dBm (S.C.L.)
Channel to Case
Thermal Resistance
-42.0 -45.0 -
dBc
R
th
T
ch
-
1.4 1.6
o
C /W
Channel Temperature Rise
10V x Idsr X Rth
-
-
100
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1011-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1011-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1011-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7.5dB, 10.7 11.7GHz, 1650mA, Bulk |
| FLM1011-8F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM11/2 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
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