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參數(shù)資料
| 型號(hào)： | FLM0910-15F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X-Band Internally Matched FET |
| 中文描述： | X波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 112K |
| 代理商： | FLM0910-15F |
X-Band Internally Matched FET
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=7.5dB(Typ.)
High PAE:
η
add=32%(Typ.)
Broad Band: 9.5~10.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
Edition 1.1
May 2005
1
FLM0910-15F
DESCRIPTION
The FLM0910-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
DC Input Voltage
V
DS
Forward Gate Current
I
GF
Reverse Gate Current
I
GR
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
-
-
-0.5
-5.0
41.0
6.5
-
-
-
-
-
Typ.
7.2
4500
-1.5
-
42.0
7.5
4.0
32
-
2.3
-
Max.
10.8
-
-3.0
-
-
-
5.0
-
1.2
2.6
100
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
N
add
G
R
th
T
ch
A
mS
V
V
dBm
dB
A
%
dB
o
C/W
o
C
Channel to Case
10V x I
dsr
X R
th
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
ESD
Class III
2000V ~
I
GS
=-300uA
V
DS
=10V
I
DS
=0.5I
DSS
(typ.)
f= 9.5
~
10.5 GHz
Zs=Z
L
=50 ohm
Unit
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=3.5A
V
DS
=5V , I
DS
=300mA
R
G
=50 ohm
-3.62
Item
Symbol
Condition
Limit
10
16.7
R
G
=50 ohm
57.7
Rating
15
-5
Condition
Limit
-65 to +175
175
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM0910-25F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7dB, 9.5 10.5GHz, 6500mA, Bulk |
| FLM0910-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM0910-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM0910-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7.5dB, 9.5 10.5GHz, 2200mA, Bulk |
| FLM1 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
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