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參數(shù)資料
| 型號(hào)： | FLM0910-25F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X-Band Internally Matched FET |
| 中文描述： | X波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | FLM0910-25F |
X-Band Internally Matched FET
FEATURES
High Output Power: P1dB=44dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
η
add=30%(Typ.)
Broad Band: 9.5
～
10.5GHz
Impedance Matched Zin/Zout = 50
Ω
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
℃
)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
℃
)
CASE STYLE: IK
Edition 1.3
September 2004
1
FLM0910-25F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
Ω
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
93.7
-65 to +175
V
V
W
℃
Channel Temperature
T
ch
175
℃
Power Gain at 1dB G.C.P.
Limit
Typ.
10.8 16.2
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
Δ
G
A
mS
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-
10000 -
-0.5 -1.5 -3.0
-5.0 -
-
43 44 -
6.0 7.0 -
-
6.5 7.2
V
DS
=10V
f=9.5 - 10.5 GHz
I
DS
=0.6Idss
Zs=Z
L
=50
Ω
Power-added Efficiency
η
add
%
dB
-
30 -
-
-
±
0.6
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=6.92A
V
DS
=5V , I
DS
=500mA
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-500uA
G
1dB
Thermal Resistance
R
th
Δ
T
ch
Channel to Case
-
1.4 1.6
℃
/W
Channel Temperature Rise
10V X Idsr X Rth
-
-
100
℃
DESCRIPTION
The FLM0910-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
Ω
system.
Recommended Operating Condition(Case Temperature Tc=25
Item
Symbol
℃
)
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
≦
10
≦
64
V
mA
Limit
R
G
=25
Ω
Reverse Gate Current
I
GR
R
G
=25
Ω
≧
-11.2
mA
G.C.P.:Gain Compression Point
ESD
Class
Ⅲ
2000V
～
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|---|---|
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