參數(shù)資料
型號: FLL200IB-3
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: L-Band Medium & High Power GaAs FET
中文描述: L波段中等
文件頁數(shù): 3/6頁
文件大?。?/td> 116K
代理商: FLL200IB-3
3
FLL200IB-1
L-Band Medium & High Power GaAs FET
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS
0.6 IDSS
f = 1.5 GHz
21 23
25
27
29
31
Input Power (dBm)
44
42
40
38
36
34
32
30
40
50
20
10
O
η
add
Pout
η
a
S-PARAMETERS
VDS= 10V, IDS= 4800mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2500
.888
.841
.754
.584
.353
.341
.490
.609
.680
.719
.753
.942
124.3
110.9
91.4
60.4
1.2
-87.7
-133.3
-156.4
-170.8
179.5
173.8
145.3
1.517
1.761
2.113
2.559
2.876
2.754
2.443
2.215
2.096
2.034
1.953
.563
13.5
-.2
-18.0
-42.4
-73.3
-105.9
-132.5
-156.1
-179.2
155.9
126.8
-15.5
.009
.012
.015
.019
.022
.021
.019
.017
.016
.015
.015
.006
-5.0
-17.3
-33.3
-56.8
-86.9
-119.8
-147.5
-172.2
162.7
135.4
103.5
-39.0
.819
.796
.786
.790
.790
.800
.787
.764
.732
.716
.729
.451
150.3
147.5
145.9
142.7
140.7
136.5
131.6
127.5
123.4
121.2
116.4
32.7
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
3
S
0
°
-90
°
S21
S12
1
0.06
2
1GHz
1GHz
1GHz
1GHz
2
2
1.1
1.2
1.2
1.3
1.2
1.3
1.3
1.4
1.4
1.5
1.6
1.6
1.7
1.8
1.8
1.9
2.5
2
2
1.1
1.4
1.4
1.5
1.5
1.6
1.6
1.7
1.7
1.8
1.8
1.9
1.9
2.5
2.5
0.1
250
50
25
10
SCALE FOR |S21|
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參數(shù)描述
FLL21E004ME 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET
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FLL21E045IY 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET
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