- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370202 > FLF10 Series High Density FLASH Memory Card 32, 64, 96, 128, 160, 192 MB(32, 64, 96, 128, 160, 192M字節(jié)高密度閃速存儲(chǔ)器卡) PDF資料下載
參數(shù)資料
| 型號(hào)： | FLF10 Series |
| 英文描述： | High Density FLASH Memory Card 32, 64, 96, 128, 160, 192 MB(32, 64, 96, 128, 160, 192M字節(jié)高密度閃速存儲(chǔ)器卡) |
| 中文描述： | 高密度閃存卡32，64，96，128，160，192字節(jié)（32，64，96，128，160，192M字節(jié)高密度閃速存儲(chǔ)器卡） |
| 文件頁數(shù)： | 6/17頁 |
| 文件大小： | 202K |
| 代理商： | FLF10 SERIES |
November 2000 Rev. 3 - ECO #13392
6
PCMCIA Flash Memory Card
FLF10 Series
PC Card Products
The Card Information Structure (CIS) contains information about Register addressing and Memory
structure.
Cards with memory capacity up to 64MB do not support Configuration Index bits.
Notes:
1. Reading from undefined address location or unsupported bits will return random data.
2. Writing to undefined address location may result in card malfunctioning due to limited
address decoding.
3. See block diagram for more details about control registers.
Writing commands to the CUI enables reading of device data, query, identifier codes, inspection and clearing
of the status register, and, when V
PEN
= V
PENH
, block erasure, program, and lock-bit configuration.
The Block Erase command requires appropriate command data and an address within the block to be erased.
The Byte/Word Program command requires the command and address of the location to be written. Set Block
Lock-Bit commands require the command and block within the device to be locked. The Clear Block Lock-Bits
command requires the command and address within the device.
The CUI does not occupy an addressable memory location. It is written when the device is enabled and WE#
is active. The address and data needed to execute a command are latched on the rising edge of WE# or the
first edge of CE
0
, CE
1
, or CE
2
that disables the device. Standard microprocessor write timings are used.
For information regarding modes of operation, commands, and
programming details for the memory components, please consult the
Intel 28F128J3A data sheet.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLG Series | Flash Memory Card 256Kilobyte Through 5 Megabyte (Intel based)(256K字節(jié)-5M字節(jié)閃速存儲(chǔ)器卡（基于Intel）) |
| FLIPCHIP11 | 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR |
| FLNR.100 | Fuse |
| FLNR.125 | Fuse |
| FLNR.150 | Fuse |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLF-18 | 制造商:LISTA 功能描述:Light Fixture |
| FLF-20 | 功能描述:保險(xiǎn)絲 20A Cartridge Fuse RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| FLF-30 | 功能描述:保險(xiǎn)絲 30A Cartridge Fuse RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| FLF3215T-100M | 功能描述:固定電感器 10uH 20% 3.2x2.5x1.55mm RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
| FLF3215T-101M | 功能描述:固定電感器 100uH 20% 3.2x2.5x1.55mm RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。