參數(shù)資料
型號: FLF10 Series
英文描述: High Density FLASH Memory Card 32, 64, 96, 128, 160, 192 MB(32, 64, 96, 128, 160, 192M字節(jié)高密度閃速存儲(chǔ)器卡)
中文描述: 高密度閃存卡32,64,96,128,160,192字節(jié)(32,64,96,128,160,192M字節(jié)高密度閃速存儲(chǔ)器卡)
文件頁數(shù): 2/17頁
文件大?。?/td> 202K
代理商: FLF10 SERIES
November 2000 Rev. 3 - ECO #13392
2
PCMCIA Flash Memory Card
FLF10 Series
PC Card Products
R/BUSY
R/B0
R/B(N-1)
R/B1
VS2
VS1
10k
N.C.
N.C.
Vpp2
Vpp1
Vcc
Vcc
GND
WAIT
CD1
CD2
BVD1
BVD2
Vcc
OPEN
OPEN
OPEN
/CE1, /CE2,/OE, /WE, /Reg: pull up typ 100k
A0:
Reset:
pull down typ 100k
pull down typ 220k
R/Busy - Open Drain output
pull up typ 100k
DATA
DATA
N x 28F128J3A
Device 0
Device 1
Device 3
Device 2
Device (N-2)
Device (N-1)
A0
control
ADDRESS
A1-A25
B26, (B27..)
D5-D0=Page Number (PN)
/WRi
/RDi
Q2
Q0
CL0
control
Ai
Qn
+
(A1-A25)
(B26)
ADDRESS BUS
(A1-A25)
CIS
E2PROM 2kB
Management
Registers
I/O buffer
DATA
-
D15
Q0-Q7
0000h
4000h
A1-A23
A24, A25, B26
At/Reg enable
Ctrl
Device Pair 0
Device Pair 1
Device Pair (N/2 - 1)
ADDRESS
Register NAME
Configuration Option Register
4000h
4002h
4004h
4006h
4008h
Config. and Status Reg.
/WE
/OE
/CE1
/CE2
/REG
CHn
CH0
CLn
CL0
CLn
CL1
CH0
CH0
CH0
SR Clr
Reg Clr
M Res
Configuration Option Register: A=4000h (Read/Write)
- Page Number (PN) -
D4
D7
D5
D6
D1
D3
D2
D0
SRes
LvReq
Configuration Option Register: ADRS=4000h
D6 LevelReq (not supported)
D5-D0
Configuration index
D5-D2 reserved
D0:D1 Page Number Config. (PN) Power On default =0
- Page Number (PN) -
D4
D3
D2
D7
D6
D7 Soft Reset, active High
1=Reset State
0=End Reset State
D0
D5
D1
D7
D3
D0
D6
D2
D4
D1
D5
Configuration Status Register: ADRS=4002h
D2 Power Down; active High
1 = Place all memory devices in power down mode
0 = normal operation
Power On default=0
Read/Write
Read/Write
SRes
LvReq
PwrDwn
reserved
reserved
D0 - D15
FLF10 Flash Card
based on Strata Flash 28F128J3A
220k
R
C
Vcc
M Res
SR Clr
Reg Clr
Reset
reset circuit
DATA
-
D7
Manufacturer ID Intel
89
H
18
H
Device ID 28F128J3A
(3V-5V)
Block Diagram
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