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參數(shù)資料
| 型號(hào)： | FEP16JTHE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | FEP16JTHE3/45 |
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
Document Number: 88596
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
50
100
150
0
4
8
12
16
20
A
v
erage
For
w
ard
C
u
rrent
(A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
C = 100 °C
8.3 ms Single Half Sine-Wave
0.2
0.6
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneo
u
s
For
w
ard
C
u
rrent
(A)
50 - 400 V
300 - 400 V
500 - 600 V
T
J = 125 °C
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
0
20
40
60
80
100
0.1
0.01
1
10
100
50 - 400 V
500 - 600 V
T
J = 100 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
50 - 400 V
500 - 600 V
T
J = 125 °C
f = 1.0 MHz
V
sig = 50 mVp-p
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