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參數(shù)資料
| 型號： | FEP16JTHE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | FEP16JTHE3/45 |
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88596
Revision: 07-Nov-07
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
Maximum instantaneous
forward voltage per diode (1)
8.0 A
VF
0.95
1.30
1.50
V
Maximum DC reverse current
per diode at rated DC
blocking voltage
TC = 25 °C
TC = 100 °C
IR
10
500
A
Maximum reverse recovery
time per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
50
ns
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
85
60
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
FEPF
FEPB
UNIT
Typical thermal resistance from junction to case per diode
RθJC
2.2
3.1
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
FEP16JT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
FEPF16JT-E3/45
1.97
45
50/tube
Tube
TO-263AB
FEPB16JT-E3/45
1.35
45
50/tube
Tube
TO-263AB
FEPB16JT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
FEP16JTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
FEPF16JTHE3/45 (1)
1.97
45
50/tube
Tube
TO-263AB
FEPB16JTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
FEPB16JTHE3/81 (1)
1.35
81
800/reel
Tape and reel
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