參數(shù)資料
型號(hào)： FDS6676S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench? SyncFET
中文描述： 14500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 2/6頁
文件大小： 121K
代理商： FDS6676S
FDS6676S Rev F1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 1 mA, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
V
GS
= 16 V,
V
DS
= 0 V
V
GS
= –16 V,
V
DS
= 0 V
I
D
= 1 mA
30
V
21
mV/
°
C
μ
A
nA
nA
500
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 14.5 A
V
GS
= 4.5 V,
I
D
= 13.2 A
V
GS
=10 V, I
D
=14.5A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 14.5 A
I
D
= 1 mA
1
1.4
–3.8
5.25
6.0
8.0
3
V
mV/
°
C
m
7.5
9.0
12
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
50
A
S
80
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
4665
826
304
1.4
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
10
82
30
43
10
11
20
20
131
48
60
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 14.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
I
RM
Diode Reverse Recovery Current
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 14.5A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
390
490
31
1.8
30
700
mV
nS
A
nC
(Note 3)
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
See “SyncFET Schottky body diode
characteristics” below
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關(guān)PDF資料
PDF描述
FDS6678A 30V N-Channel PowerTrench MOSFET
FDS6679Z 30 Volt P-Channel PowerTrench MOSFET
FDS6679 30 Volt P-Channel PowerTrench MOSFET
FDS6680AS 30V N-Channel PowerTrench SyncFET
FDS6680AS_NL 30V N-Channel PowerTrench SyncFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6678A 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6679 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6679 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS6679_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30 Volt P-Channel PowerTrench㈢ MOSFET
FDS6679AZ 功能描述:MOSFET -30V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*