參數(shù)資料
型號(hào): FDS6630A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: N-Channel Logic Level PowerTrenchTM MOSFET
中文描述: 6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 197K
代理商: FDS6630A
F
FDS6630A Rev. C1
Typical Characteristics
(continued)
0.1
0.2
0.5
1
2
5
10
30
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0
2
4
6
8
10
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 6.5A
V = 5V
10V
15V
0.1
0.3
1
3
10
30
50
0.01
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
RDS(ON LIMIT
V = 10V
SINGLE PULSE
R =125°C/W
T = 25°C
DC
1s
10s
10ms
100ms
1ms
100us
0.0001
0.001
001
0.1
t , TI ME (s e c)
1
10
100
300
0.001
0.002
0.005
001
002
005
0.1
0.2
0.5
1
T
r
S n g l e P ul s e
D = 05
01
0.05
0.02
001
02
D u t y C y c l e, D = t /t
1
2
R (t) = r(t) * R
R = 125°C/ W
T - T = P * R JA
P(pk)
t
1
t
2
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6630A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
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FDS66630A 制造商:Fairchild 功能描述:30V, SINGLE, SO-8
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FDS6670A_03 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel, Logic Level, PowerTrench MOSFET