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參數(shù)資料
| 型號： | FDS6614A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 9300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 275K |
| 代理商： | FDS6614A |
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DMOS Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current, Forward
I
GSSR
Gate-Body Leakage Current, Reverse
Parameter
Test Conditions
Min
Typ
Max
Units
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
=
–
20 V, V
DS
= 0 V
30
V
Breakdown Voltage Temperature
24
mV/
°
C
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 9.3 A
V
GS
= 10 V, I
D
= 9.3 A
T
J
@ 125
°
C
V
GS
= 4.5 V, I
D
= 8 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 9.3 A
1
1.6
–
4
3
V
Gate Threshold Voltage
mV/
°
C
0.015
0.022
0.019
26
0.018
0.030
0.025
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
20
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1160
250
100
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
9
11
23
8
12
3.2
3.7
17
20
37
16
17
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 9.3 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.75
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| FDS6630 | N-Channel Logic Level PowerTrenchTM MOSFET |
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| FDS6644 | 30V N-Channel PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6630 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6630A | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6630A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6644 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS66630A | 制造商:Fairchild 功能描述:30V, SINGLE, SO-8 |
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