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參數(shù)資料
| 型號： | FDS6609A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 646K |
| 代理商： | FDS6609A |
FDS6609A Rev B(W)
Typical Characteristics
0
8
16
24
32
40
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10.0V
-4.5V
-5.0V
-3.0V
-6.0V
-3.5V
-4.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
-I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= -3.5V
-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-4.0V
-9.0V
-10.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -7A
V
GS
= -10V
0
0.03
0.06
0.09
0.12
0.15
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -3.6A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDS6612A_Q | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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