參數(shù)資料
型號(hào): FDS6298
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel Fast Switching PowerTrench MOSFET
中文描述: 13 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SO-8
文件頁數(shù): 3/5頁
文件大?。?/td> 311K
代理商: FDS6298
F
FDS6298 Rev. C (W)
3
Typical Characteristics
Figure 1.
0
10
20
30
40
50
60
70
80
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.0V
4.5V
3.5.V
4.0V
V
GS
= 10V
6.0V
On-Region Characteristics
Figure 2.
Drain Current and Gate Voltage
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
10
20
30
40
50
60
70
80
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
4.0V
5.0V
4.5V
10V
6.0V
3.5V
On-Resistance Variation with
Figure 3.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 13A
V
GS
= 10V
On-Resistance Variation with
Temperature
Figure 4.
0.004
0.008
0.012
0.016
0.02
0.024
0.028
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 6.5A
T
A
= 125
o
C
T
A
= 25
o
C
On-Resistance Variation with
Gate-to-Source Voltage
Figure 5. Transfer Characteristics
0
10
20
30
40
50
60
70
80
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
V
DS
= 5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6298 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 13A, SOIC
FDS6298_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel Fast Switching PowerTrench MOSFET
FDS6299S 功能描述:MOSFET 30V N-Ch PowerT SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6299S_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDS6375 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube