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參數(shù)資料
| 型號： | FDS6298 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel Fast Switching PowerTrench MOSFET |
| 中文描述： | 13 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 311K |
| 代理商： | FDS6298 |
F
FDS6298 Rev. C (W)
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A,
Referenced to 25°C
V
GS
= 0V, V
DS
= 24V
V
GS
=
±
20V, V
DS
= 0V
30
-
-
V
-
30
-
mV/°C
-
-
-
-
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
I
D
= 13A, V
GS
= 10V
I
D
= 12A, V
GS
= 4.5V
I
D
= 13A, V
GS
= 10V,
T
J
= 125°C
I
D
= 13A, V
DS
= 10V
1
1.7
3
V
-
-5
-
mV/°C
R
DS(on)
Static Drain-Source On-Resistance
-
-
7.4
9.4
9
m
12
-
11
15
g
FS
Forward Transconductance
-
58
-
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
-
-
-
1108
109
1
-
-
-
pF
pF
pF
V
GS
= 15mV, f = 1MHz,
0.3
1.7
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15V, I
D
= 1A
V
GS
= 10V, R
GEN
= 6
-
-
-
-
-
-
-
11
5
27
7
10
3
3
20
10
43
14
14
-
-
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V, I
D
= 13A,
V
GS
= 5V
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
rr
Notes:
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.1 A (Note 2)
-
-
-
0.74
27
13
1.2
-
-
V
ns
nC
I
F
= 13A, dI
F
/dt=100A/
μ
s
1.
R
θ
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
a) 50
o
C/W when mounted on a
1in
2
pad of 2 oz copper
b) 125
o
C/W whe mounted on a
minimum pad
Scale 1: 1 on letter size paper
2.
Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6298 | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 13A, SOIC |
| FDS6298_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel Fast Switching PowerTrench MOSFET |
| FDS6299S | 功能描述:MOSFET 30V N-Ch PowerT SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6299S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDS6375 | 功能描述:MOSFET SO-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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