參數(shù)資料
型號： FDS4780
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 40V N-Channel PowerTrench MOSFET
中文描述： 10800 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 2/6頁
文件大?。?/td> 355K
代理商： FDS4780
FDS4780 Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
I
AS
Drain-Source Avalanche Current
Single Pulse, V
DD
=20V, I
D
=10.8A
240
10.8
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 32 V,
V
GS
= 0 V
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
I
D
= 250
μ
A
40
V
Breakdown Voltage Temperature
42
mV/
°
C
μ
A
nA
nA
1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 10.8 A
V
GS
= 10 V,I
D
= 10.8 A, T
J
=115
°
C
I
D
= 250
μ
A
2
3.9
–8
8
13
5
V
Gate Threshold Voltage
mV/
°
C
m
10.5
21
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
GS
= 10 V,
V
DS
= 10 V, I
D
= 10.8 A
V
DS
= 5 V
22
A
S
36
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1686
384
185
pF
pF
pF
V
DS
= 20 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
9
30
15
30
9
10
22
18
48
27
40
ns
ns
ns
ns
nC
nC
nC
V
DD
= 20 V,
V
GS
= 10 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= 20 V, I
D
= 10.8 A,
V
GS
= 10 V
F
相關PDF資料
PDF描述
FDS4885C Dual N & P-Channel PowerTrench MOSFET
FDS4895C Dual N & P-Channel PowerTrench MOSFET
FDS4897C Dual N & P-Channel PowerTrench MOSFET
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相關代理商/技術參數(shù)
參數(shù)描述
FDS4885C 功能描述:MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4895C 功能描述:MOSFET S08 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4897AC 功能描述:MOSFET 40V Dual N & P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4897C 功能描述:MOSFET 40V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4935 功能描述:MOSFET 30V P-CH DUAL PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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