參數(shù)資料
型號(hào)： FDP5690
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60V N-Channel PowerTrenchTM MOSFET
中文描述： 32 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/16頁(yè)
文件大?。?/td> 391K
代理商： FDP5690
F
FDP5690/FDB5690 Rev.
C
Electrical Characteristics
T
c
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note1)
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
W
DSS
V
DD
= 30 V, I
D
= 32A
80
mJ
32
A
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
60
V
Breakdown Voltage Temperature
61
mV/
°
C
V
DS
= 48 V, V
GS
= 0 V
1
μ
A
nA
I
GSSF
V
GS
= 20 V, V
DS
= 0 V
100
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
2
2.4
4
V
Gate Threshold Voltage
I
D
= 250
μ
A, Referenced to 25
°
C
-6.4
mV/
°
C
V
GS
= 10 V, I
D
= 16 A,
V
GS
= 10 V, I
D
= 16 A,T
J
= 125
°
C
V
GS
= 6 V, I
D
= 15 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 16 A
0.021
0.042
0.024
0.027
0.055
0.032
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
50
A
S
32
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1120
160
80
pF
pF
pF
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 1)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
10
9
24
10
23
3.9
6.8
18
18
39
18
33
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 15 V,
I
D
= 16 A, V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
(Note 1)
V
SD
Drain-Source Diode Forward
Voltage
Note:
1.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
32
1.2
A
V
V
GS
= 0 V, I
S
= 16 A
(Note 1)
0.92
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