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參數(shù)資料
| 型號： | FDP46N30 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Mounting Type:PC Board; Series:BXA; Efficiency:80%; Leaded Process Compatible:Yes; Output Current:5A; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| 中文描述： | 46 A, 300 V, 0.079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 697K |
| 代理商： | FDP46N30 |
3
www.fairchildsemi.com
FDP46N30 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
°
C
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
°
C
25
°
C
-55
°
C
* Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
°
C
R
D
]
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
°
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
°
C
I
D
,
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
2000
4000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 150V
V
DS
= 240V
V
DS
= 60V
* Note : I
D
= 46A
V
G
,
Q
G
, Total Gate Charge [nC]
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