- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375779 > FDP46N30 (FAIRCHILD SEMICONDUCTOR CORP) DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Mounting Type:PC Board; Series:BXA; Efficiency:80%; Leaded Process Compatible:Yes; Output Current:5A; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號(hào)： | FDP46N30 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Mounting Type:PC Board; Series:BXA; Efficiency:80%; Leaded Process Compatible:Yes; Output Current:5A; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| 中文描述： | 46 A, 300 V, 0.079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 697K |
| 代理商： | FDP46N30 |
2005 Fairchild Semiconductor Corporation
FDP46N30 Rev. A
1
www.fairchildsemi.com
F
August 2005
UniFET
TM
FDP46N30
300V N-Channel MOSFET
Features
46A, 300V, R
DS(on)
= 0.079
@V
GS
= 10 V
Low gate charge (typical 58 nC)
Low C
rss
(typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
z
z
z
D
G
TO-220
FDP Series
G
S
D
Symbol
Parameter
FDP46N30
Unit
V
DSS
I
D
Drain-Source Voltage
300
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
46
27.6
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
184
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1205
mJ
Avalanche Current
(Note 1)
46
A
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
417
3.3
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.30
°
C/W
°
C/W
°
C/W
Thermal Resistance, Case-to-Sink
0.5
--
Thermal Resistance, Junction-to-Ambient
--
62.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDP51N25 | 250V N-Channel MOSFET |
| FDP52N20 | 200V N-Channel MOSFET |
| FDP55N06 | 60V N-Channel MOSFET |
| FDPF55N06 | 60V N-Channel MOSFET |
| FDP5645 | CONN RCPT .100 36POS GOLD T/H |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP4N60NZ | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 600V, 3.8A, 2.5?? |
| FDP-500 | 制造商:PANASONIC ELECTRIC WORKS - ACSD 功能描述:PROTECT TUBE M6 DIF. FIBER 500MM 制造商:Panasonic Electric Works 功能描述:PROTECTIVE TUBE FOR M6 DIF. FIBER 500MM |
| FDP51N25 | 功能描述:MOSFET 250V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP51N25_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDP52N20 | 功能描述:MOSFET 200V N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。