參數資料
型號: FDI8442
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET
中文描述: 23 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數: 6/7頁
文件大?。?/td> 316K
代理商: FDI8442
F
FDI8442 Rev
. A
www.fairchildsemi.com
6
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
Typical Characteristics
-80
-40
0
40
80
120
160
200
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
N
T
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
=
V
DS
I
D
=
250
μ
A
-80
-40
0
40
80
120
160
200
0.90
0.95
1.00
1.05
1.10
T
J
, JUNCTION TEMPERATURE
(
o
C
)
N
B
I
D
= 250
μ
A
0.1
1
10
100
1000
10000
C
iss
C
oss
C
rss
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
50
40000
0
50
100
150
200
0
2
4
6
8
10
V
DD
= 20V
V
DD
= 25V
V
DD
= 15V
I
D
= 80A
Q
g
,
GATE CHARGE(nC)
V
G
,
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