參數(shù)資料
型號(hào): FDH45N50F_0605
廠商: Fairchild Semiconductor Corporation
英文描述: 500V N-Channel MOSFET, FRFET
中文描述: 500V N溝道MOSFET,F(xiàn)RFET
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 1050K
代理商: FDH45N50F_0605
2006 Fairchild Semiconductor Corporation
FDH45N50F Rev. B
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDH45N50
F
500V N-Channel MOSFET, FRFET
Features
45A, 500V, R
DS(on)
= 0.12
Ω
@V
GS
= 10 V
Low gate charge ( typical 105 nC)
Low C
rss
( typical 62 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
G
S
D
TO-247
FDH Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDH45N50F
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
45
28.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
180
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1868
mJ
Avalanche Current
(Note 1)
45
A
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
50
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
625
5
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.2
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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