參數(shù)資料
型號(hào)： FDH45N50F
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 500V N-Channel MOSFET, FRFET
中文描述： 45 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大小： 1098K
代理商： FDH45N50F
2006 Fairchild Semiconductor Corporation
FDH45N50F Rev. A
1
www.fairchildsemi.com
F
January 2006
UniFET
TM
FDH45N50
F
500V N-Channel MOSFET, FRFET
Features
45A, 500V, R
DS(on)
= 0.12
@V
GS
= 10 V
Low gate charge ( typical 105 nC)
Low C
rss
( typical 62 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
G
S
D
TO-247
FDH Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDH45N50F
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
45
28.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
180
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1868
mJ
Avalanche Current
(Note 1)
45
A
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
625
5
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.2
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDH45N50F_0605 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET
FDH45N50F_08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:500V N-Channel MOSFET, FRFET
FDH45N50F_F133 功能描述:MOSFET 500V N Channel MOSFET FRFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDH50N50 功能描述:MOSFET 500V N-Channel UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDH50N50_F133 功能描述:MOSFET N-CH/500V/50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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