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參數(shù)資料
| 型號： | FDG6302P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel, Digital FET |
| 中文描述： | 140 mA, 25 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 302K |
| 代理商： | FDG6302P |
FDG6302P Rev.F
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -4.5V
I = -0.14A
0
1
2
3
4
0
0.05
0.1
0.15
0.2
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
V = -4.5V
-2.7V
-3.0V
-3.5V
-2.0V
-2.5V
0
0.05
0.1
0.15
0.2
0.5
1
1.5
2
2.5
-I , DRAIN CURRENT (A)
D
V = -2.0V
R
D
-4.5V
-4.0V
-3.0V
-2.7V
-3.5V
-2.5V
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
-V , GATE TO SOURCE VOLTAGE (V)
R
D
I = -0.07A
T = 125°C
T = 25°C
0
1
2
3
4
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5.0V
T = -55°C
125°C
25°C
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.3
-V , BODY DIODE FORWARD VOLTAGE (V)
-
S
T = 125°C
25°C
-55°C
V = 0V
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6302P_D87Z | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6302P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6302PD87Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 25V V(BR)DSS | TSOP |
| FDG6303 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel, Digital FET |
| FDG6303N | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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