參數(shù)資料
型號： FDG312P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel 2.5V Specified PowerTrench⑩ MOSFET
中文描述： 1200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 206K
代理商： FDG312P
F
FDG312P Rev. C
DMOS Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-20
V
-19
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.4
-0.9
2.5
-1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V, I
D
= -1.2 A
V
GS
= -4.5 V, I
D
= -1.2 A @125
°
C
V
GS
= -2.5 V, I
D
= -1 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -1.2 A
0.135
0.200
0.187
0.18
0.29
0.25
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-3
A
S
3.8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
330
80
35
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
7
12
16
5
3.3
0.8
0.7
15
22
26
12
5
ns
ns
ns
ns
nC
nC
nC
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -10 V, I
D
= -1.2 A,
V
GS
= -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
-0.6
-1.2
A
V
V
GS
= 0 V, I
S
= -0.6 A
(Note 2)
-0.83
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 170
°
C/W when
mounted on a 1 in
2
pad of 2oz copper.
b) 225
°
C/W when
mounted on a half
of package sized 2oz.
copper.
c) 260
°
C/W when
mounted on a minimum
pad of 2oz copper.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG312P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDG313N 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG313N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDG313N_D87Z 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG314P 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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