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參數(shù)資料
| 型號： | FDFS2P753Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| 中文描述： | 3 A, 30 V, 0.162 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 341K |
| 代理商： | FDFS2P753Z |
November 2006
F
M
2006 Fairchild Semiconductor Corporation
FDFS2P753Z Rev.A
www.fairchildsemi.com
1
FDFS2P753Z
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
-30V, -3A, 115m
Features
Max r
DS(on)
= 115m
at V
GS
= -10V, I
D
= -3.0A
Max r
DS(on)
= 180m
at V
GS
= -4.5V, I
D
= -1.5A
V
F
< 500mV @ 1A
V
F
< 580mV @ 2A
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and MOSFET pinout for
design flexibility
RoHS Compliant
General Description
The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-30
±25
-3
-16
1.6
6
-20
-2
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
(Note 1a)
-Pulsed
Power Dissipation
(Note 1a)
Single Pulse Avalanche Energy (Note 2)
Schotty Repetitive Peak Reverse Voltage
Schotty Average Forward Current (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
E
AS
V
RRM
I
O
T
J
, T
STG
W
mJ
V
A
°
C
R
θ
JA
R
θ
JC
Thermal Resistance, Junction to Ambient (Note 1a)
78
°C/W
Thermal Resistance, Junction to Case (Note 1)
40
Device Marking
FDFS2P753Z
Device
FDFS2P753Z
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
A
A
S
G
C
C
D
D
Pin 1
SO-8
1
5
6
7
8
4
3
2
A
A
C
C
D
D
G
S
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDFS6N303 | 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N303_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode |
| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFS6N754 | 功能描述:MOSFET 30V 4A 56OHM NCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG.1B.110.CZZ | 功能描述:環(huán)形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產(chǎn)品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數(shù)量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
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