參數(shù)資料
型號： FDFS2P753AZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ
中文描述： 3 A, 30 V, 0.115 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 4/7頁
文件大?。?/td> 243K
代理商： FDFS2P753AZ
F
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDFS2P753AZ Rev.B
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
0
4
8
12
16
V
GS
=
-10V
V
GS
=
-4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -
4V
V
GS
= -3.5V
V
GS
=
-5V
-
D
,
D
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
4
-I
D
,
DRAIN CURRENT(A)
8
12
16
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=
-5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
V
GS
=
-4.5XV
V
GS
= -4V
V
GS
= -3.5V
V
GS
=
-10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -3A
V
GS
= -10V
N
Figure 4.
2
4
6
8
10
50
100
150
200
250
300
350
400
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= -1.5A
r
D
,
S
(
m
)
-V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0
1
2
3
4
5
6
0
4
8
12
16
V
DD
= -5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFS2P753AZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ
FDFS2P753Z 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS6N303 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS6N303_03 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET with Schottky Diode
FDFS6N548 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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