參數(shù)資料
型號： FDFS2P103A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 5.3 A, 30 V, 0.059 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/6頁
文件大?。?/td> 144K
代理商： FDFS2P103A
FDFS2P103A Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V,
I
D
= –250
μ
A,
Referenced to 25
°
C
V
DS
= –24 V,
V
GS
= ±25 V,
I
D
= –250
μ
A
–30
V
Breakdown Voltage Temperature
–22
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
–1
±100
μ
A
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A,
Referenced to 25
°
C
V
GS
= –10 V,
V
GS
= –4.5 V, I
D
= –4 A
V
GS
=–10 V, I
D
= –5.3A, T
J
=125
°
C
V
DS
= –5V,
I
D
= –250
μ
A
–1
–1.8
–3
V
Gate Threshold Voltage
4.2
mV/
°
C
I
D
= –5.3 A
50
76
68
59
92
88
m
g
FS
Forward Transconductance
I
D
= –5.3 A
8.9
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
535
135
75
4.7
pF
pF
pF
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 0 V, f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
(Note 2)
11
16
15
10
21
28
26
19
ns
ns
ns
ns
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
5.7
1.8
2.4
8
nC
nC
nC
V
DS
= –15 V, I
D
= –5.3 A,
V
GS
= –5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Schottky Diode Characteristics
I
R
Reverse Leakage
–1.3
–1.2
A
V
V
SD
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.8
V
R
= 30 V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
160
225
80
305
185
380
500
280
250
350
250
420
μ
A
mV
mV
mV
mV
mV
I
F
= 0.1A
I
F
= 1A
V
F
Forward Voltage
I
F
= 3A
F
相關(guān)PDF資料
PDF描述
FDFS2P106A Integrated 60V P-Channel PowerTrench剖 MOSFET and Schottky Diode
FDFS2P753AZ Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ
FDFS2P753Z Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFS6N303 N-Channel MOSFET with Schottky Diode
FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFS2P103A_Q 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P106A 功能描述:MOSFET 60V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P106A_Q 功能描述:MOSFET 60V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P753AZ 功能描述:MOSFET -30V Int P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P753AZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*