- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375773 > FDD8880 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDD8880 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 127K |
| 代理商： | FDD8880 |
2004 Fairchild Semiconductor Corporation
FDD8880 Rev. B1
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Package current limitation is 35A.
2:
Starting T
J
= 25°C, L = 0.14mH, I
AS
= 28A, V
DD
= 27V, V
GS
= 10V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 4.5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
0.009
0.012
V
r
DS(ON)
Drain to Source On Resistance
0.007
0.009
-
0.013
0.015
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
1260
260
150
2.3
23
13
1.3
3.8
2.5
5.0
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
31
17
1.7
-
-
-
V
DD
= 15V, I
D
= 35A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
8
147
-
-
-
-
108
ns
ns
ns
ns
ns
ns
91
38
32
-
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
I
SD
= 15A
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
27
14
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDDL300 | OPTOISOLATOR W/BASE 6-DIP |
| FDDL300A | High Conductance Low Leakage Diode |
| FDDL333 | High Conductance Low Leakage Diode |
| FDFC2P100 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm |
| FDFC3N108 | N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD8880_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ |
| FDD8880_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8880_G | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-Channel PowerTrench? MOSFET |
| FDD8880_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD8882 | 功能描述:MOSFET 30V N-Channel PowerTrench? MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。