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參數(shù)資料
| 型號： | FDD8796 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 25V, 35A, 5.7mOhm |
| 中文描述： | 35 A, 25 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 310K |
| 代理商： | FDD8796 |
F
FDD8796/FDU8796 Rev. B
4
www.fairchildsemi.com
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
V
DD
= 16V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 13V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
4000
30
Capacitance vs Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
0.01
0.1
1
10
100
1
10
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
A
,
t
AV
, TIME IN AVALANCHE(ms)
50
300
Figure 10.
25
50
75
100
125
150
175
0
20
40
60
80
100
R
θ
JC
=
1.7
o
C/W
I
D
,
T
C
, CASE TEMPERATURE
(
o
C
)
V
GS
= 10V
V
GS
= 4.5V
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
1
10
0.1
1
10
100
1000
LIMITED BY
PACKAGE
1ms
100us
10ms
10us
DC
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
40
Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
10000
SINGLE PULSE
V
GS
= 10V
P
(
P
)
,
t, PULSE WIDTH (s)
50
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
-------150
C
Typical Characteristics
T
J
= 25°C unless otherwise noted
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