參數(shù)資料
型號(hào)： FDD8870
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 21 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： DPAK-3
文件頁數(shù)： 1/11頁
文件大?。?/td> 129K
代理商： FDD8870
2004 Fairchild Semiconductor Corporation
September 2004
FDD8870 / FDU8870 Rev. C
F
FDD8870 / FDU8870
N-Channel PowerTrench
MOSFET
30V, 160A, 3.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 3.9m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 4.4m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
160
A
150
21
A
A
A
mJ
W
W/
o
C
o
C
Figure 4
690
160
1.07
-55 to 175
E
AS
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-251
0.94
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
100
52
Device Marking
FDD8870
FDU8870
Device
FDD8870
FDU8870
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
(TO-252)
D-PAK
相關(guān)PDF資料
PDF描述
FDU8870 N-Channel PowerTrench MOSFET
FDD8880 N-Channel PowerTrench MOSFET
FDDL300 OPTOISOLATOR W/BASE 6-DIP
FDDL300A High Conductance Low Leakage Diode
FDDL333 High Conductance Low Leakage Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8870 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.0032OHM, 160A, TO-252AA-3
FDD8870_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDD8870_F085 功能描述:MOSFET 30V NCH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8870_F085_13 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 160A, 3.9m??
FDD8874 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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