參數(shù)資料
型號(hào)： FDD8782
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 35 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 316K
代理商： FDD8782
F
FDD8782/FDU8782 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
B
VDSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
25
V
14.3
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20V,
V
GS
= 0V
V
GS
= ±20V
1
μ
A
T
J
= 150
°
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
= 35A
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
1.2
1.7
2.5
V
-6.5
mV/°C
r
DS(on)
Drain to Source On Resistance
8.5
11.0
11.0
14.0
m
12.1
18.0
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
920
230
160
1.4
1220
310
240
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 9
7
9
14
18
36
25
25
13
ns
ns
ns
ns
nC
nC
nC
nC
22
14
18
9.4
3.1
4.0
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/
μ
s
I
F
= 35A, di/dt = 100A/
μ
s
0.96
0.86
25
17
1.25
1.2
38
26
V
t
rr
Q
rr
Notes:
1:
Pulse time < 300us,Duty cycle = 2%.
2:
Starting T
J
= 25
C, L = 0.3mH, I
AS
= 21.7A ,V
DD
= 23V, V
GS
= 10V.
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
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