參數(shù)資料
型號(hào): FDD6690S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 40A條(?。﹟對(duì)252AA
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 136K
代理商: FDD6690S
FDD6690S Rev C (W)
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
F
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