參數(shù)資料
型號(hào)： FDD6690S
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 40A條（?。﹟對(duì)252AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 136K
代理商： FDD6690S
FDD6690S Rev C (W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Single Pulse, V
DD
= 15 V, I
D
=14A
245
14
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
30
V
Breakdown Voltage Temperature
19
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
500
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 10 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 15 V,
1
2
3
V
Gate Threshold Voltage
–3.3
mV/
°
C
I
D
= 10 A
I
D
= 8 A
10
15.5
16
16
24
26
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 10 A
60
A
S
27
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2010
526
186
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
10
34
14
17
6.2
5.5
18
18
55
23
24
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 10 V
I
D
= 10 A,
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
0.49
0.56
20
19.7
0.7
V
nS
nC
(Note 3)
F
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