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參數(shù)資料
| 型號： | FDB8880 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 11 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 231K |
| 代理商： | FDB8880 |
2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
F
5
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
400
1
10
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
0.001
10
100
0.01
0.1
1
500
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
10
0
20
40
60
80
1.5
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3.0
3.5
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
T
J
= 25
o
C
4.0
0
40
80
120
160
0
0.25
0.5
0.75
1.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 4.5V
V
GS
= 2.5V
8
12
16
20
2
4
6
8
10
I
D
= 5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 54A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.7
0.85
1.02
1.19
1.36
1.53
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 54A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.7
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| FDB9403 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 110A, 1.2m?? |
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