參數(shù)資料
型號(hào)： FDB8876
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm
中文描述： 71 A, 30 V, 0.0103 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 264K
代理商： FDB8876
F
FDB8876 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
30
-
-
1
V
μ
A
I
DSS
Zero Gate Voltage Drain Current
T
A
= 150
o
C
-
-
-
-
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 40A, V
GS
= 10V
I
D
= 40A, V
GS
= 4.5V
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
1.2
-
-
-
2.5
8.5
10.3
V
r
DS(ON)
Drain to Source On Resistance
5.7
7.3
m
-
11
14
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Sourse Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
1700
340
220
2.1
32
17
1.6
4.7
3.1
6.8
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
=0.5V, f = 1MHz
V
GS
= 0V to 10VV
DD
= 15V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
I
D
= 40A
I
g
= 1.0mA
45
24
2.4
-
-
-
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
9
183
-
-
-
-
137
ns
ns
ns
ns
ns
ns
113
50
41
-
Drain-Source Diode Characteristic
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
I
SD
= 3.2A
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
22
8
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting T
J
=25
O
C,L=1mH,I
AS
=19A,V
DD
=27V,V
GS
=10V
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