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參數(shù)資料
| 型號： | FDB66N15TM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V N-Channel MOSFET |
| 中文描述： | 66 A, 150 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | LEAD FREE, D2PAK-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 477K |
| 代理商： | FDB66N15TM |
FDP6644S/FDB6644S Rev
D
(W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 28A
V
DS
= 10V
20V
15V
0
800
1600
2400
3200
4000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
110ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JC
= 2.1
o
C/W
T
A
= 25
o
C
10s
100μs
0
200
400
600
800
1000
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JC
= 2.1°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
r
T
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.1 °C/W
T
J
- T
C
= P * R
θ
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
F
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