參數(shù)資料
型號： FDB6676S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench SyncFET⑩
中文描述： 76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 116K
代理商： FDB6676S
FDP6676S/FDB6676S Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 25 V, I
D
=12A
310
12
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 1 mA
30
V
Breakdown Voltage Temperature
I
D
= 1 mA, Referenced to 25
°
C
25
mV/
°
C
V
DS
= 24 V,
V
GS
= 16 V,
V
GS
= –16 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
500
100
–100
μA
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=38A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
1
1.3
3
V
Gate Threshold Voltage
–8.4
mV/
°
C
I
D
= 38 A
I
D
= 35 A
4.7
5.2
7.3
6.5
8.0
11
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 38 A
60
A
S
145
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
4853
850
316
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
14
11
89
31
40
10
11
25
20
142
50
56
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 38 A,
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 1)
(Note 1)
0.4
0.5
28.5
57
0.7
V
nS
nC
(Note 2)
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
F
相關(guān)PDF資料
PDF描述
FDP6676S 30V N-Channel PowerTrench SyncFET⑩
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FDP6676 30V N-Channel Logic Level PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB6676S_Q 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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FDB6690S_Q 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB66N15 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET
FDB66N15TM 功能描述:MOSFET 150V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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