參數(shù)資料
型號: FDB6035AL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrenchTM MOSFET
中文描述: 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 93K
代理商: FDB6035AL
FDP6035AL/FDB6035AL Rev D(W)
Typical Characteristics
0
30
60
90
120
150
180
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.0V
V
GS
= 10V
4.5V
3.5V
6.0V
4.0V
5.0V
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
80
100
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
3.5V
5.0V
6.0V
4.5V
4.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 24A
V
GS
=10V
0.005
0.010
0.015
0.020
0.025
0.030
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 24A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關(guān)PDF資料
PDF描述
FDP6035AL N-Channel Logic Level PowerTrenchTM MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDB6035L 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB603AL 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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FDB604 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS