- 您現在的位置：買賣IC網 > PDF目錄375765 > FDP6035AL (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level PowerTrenchTM MOSFET PDF資料下載
參數資料
| 型號： | FDP6035AL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 93K |
| 代理商： | FDP6035AL |
July 2003
2003 Fairchild Semiconductor Corporation
FDP6035AL/FDB6035AL Rev D(W)
FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench
ò
MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
and fast switching speed.
Features
48 A, 30 V
R
DS(ON)
= 12 m
@ V
GS
= 10 V
R
DS(ON)
= 14 m
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
Ratings
30
±
20
48
180
52
0.3
–65 to +175
Units
V
V
A
(Note 1)
W
Derate above 25
°
C
W/
°
C
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
2.9
62.5
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB6035AL
FDB6035AL
FDP6035AL
FDP6035AL
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDB6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor(N溝道邏輯電平增強型MOS場效應管) |
| FDP603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor(N溝道邏輯電平增強型MOS場效應管) |
| FDB6644 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP6035AL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| FDP6035AL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6035L | 功能描述:MOSFET N-Ch PowerTrench Logic RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP603AL | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP61N20 | 功能描述:MOSFET 200V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。