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參數(shù)資料
| 型號： | FDA15N65 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 650V N-Channel MOSFET |
| 中文描述： | 16 A, 650 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 797K |
| 代理商： | FDA15N65 |
3
www.fairchildsemi.com
FDA15N65 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
* Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
D
Ω
]
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0
10
1
150
o
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
SD
, Source-Drain voltage [V]
0
10
20
30
40
50
0
2
4
6
8
10
12
V
DS
= 325V
V
DS
= 520V
V
DS
= 130V
* Note : I
D
= 15A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
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