參數(shù)資料
型號(hào)： FDA16N50_F109
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 16.5 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3PN, 3 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 310K
代理商： FDA16N50_F109
2007 Fairchild Semiconductor Corporation
FDA16N50 Rev. B
1
www.fairchildsemi.com
F
April 2007
UniFET
TM
FDA16N50
500V N-Channel MOSFET
Features
16.5A, 500V, R
DS(on)
= 0.38
Ω
@V
GS
= 10 V
Low gate charge ( typical 32 nC)
Low C
rss
( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
G
S
D
TO-3P
FDA Series
D
G
S
Symbol
Parameter
FDA16N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16.5
9.9
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
66
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
780
mJ
Avalanche Current
(Note 1)
16.5
A
Repetitive Avalanche Energy
(Note 1)
20.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
205
2.1
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Typ
Max
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.6
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
相關(guān)PDF資料
PDF描述
FDA18N50 500V N-Channel MOSFET
FDA20N50 500V N-Channel MOSFET
FDA20N50_07 500V N-Channel MOSFET
FDA2712 N-Channel UltraFET Trench MOSFET 250V, 64A, 34mヘ
FDA33N25 N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDA18N50 功能描述:MOSFET 500V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDA200ES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOVOLTAIC-OUTPUT OPTOCOUPLER
FDA200S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOVOLTAIC-OUTPUT OPTOCOUPLER
FDA20N50 功能描述:MOSFET 500V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDA20N50_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*